Elastic wave device

ABSTRACT

An elastic wave device includes a piezoelectric substrate, an IDT electrode disposed on the piezoelectric substrate, a wiring electrode disposed on the piezoelectric substrate and connected to the IDT electrode, a first insulator disposed on the piezoelectric substrate to seal the IDT electrode and the wiring electrode, a resin layer provided on the first insulator, an inductor electrode disposed on the resin layer, a second insulator disposed on the resin layer to cover the inductor electrode, a terminal electrode disposed on the second insulator, and a connecting electrode passing through the first insulator, the second insulator, and the resin layer to electrically connect the wiring electrode, the terminal electrode, and the inductor electrode. The first insulator includes a resin and filler dispersed in the resin. A density of filler in the resin layer is smaller than an average density of the filler in the first insulator. This elastic wave device has excellent characteristics of the inductor while reducing variations of the characteristics.

This application is a U.S. National phase application of PCTINTERNATIONAL APPLICATION PCT/JP2011/006977.

TECHNICAL FIELD

The present invention relates to elastic wave devices used in, e.g.mobile telecommunications apparatuses.

BACKGROUND ART

FIG. 8 is a schematic cross-sectional view of conventional elastic wavedevice 1. Elastic wave device 1 includes piezoelectric substrate 2,interdigital transducer (IDT) electrode 3 disposed on piezoelectricsubstrate 2, wiring electrode 4 disposed on piezoelectric substrate 2and connected to IDT electrode 3, sidewall 5 disposed on piezoelectricsubstrate 2 to surround the circumference of IDT electrode 3, top plate7 placed on sidewall 5 to cover space 6 above IDT electrode 3, insulator8 covering sidewall 5 and top plate 7, inductor electrode 9 disposed oninsulator 8, insulator 10 covering inductor electrode 9 and an uppersurface of insulator 8, terminal electrode 11 disposed on insulator 10,and connecting electrode 12 passing through insulators 8 and 10 toelectrically connect wiring electrode 4, inductor electrode 9, andterminal electrode 11.

An elastic wave device similar to conventional elastic wave device 1 isdisclosed in Patent Literature 1.

The upper surface of insulator 8 is ground to have a constant height andto expose a surface of connecting electrode 12. Inductor electrode 9 isthen formed on this surface to electrically connect connecting electrode12 to inductor electrode 9.

Conventional elastic wave device 1 may decrease a Q-factor and aninductance of inductor electrode 9.

FIG. 9 is a schematic cross-sectional view of another conventionalelastic wave device 101. Elastic wave device 101 includes piezoelectricsubstrate 102, IDT electrode 103 disposed on piezoelectric substrate102, wiring electrode 104 disposed on piezoelectric substrate 102 andconnected to IDT electrode 103, sidewall 105 disposed on piezoelectricsubstrate 102 to surround IDT electrode 103, top plate 107 placed onsidewall 105 to cover excitation space 106 above IDT electrode 103,insulator 108 covering sidewall 105 and top plate 107, terminalelectrode 109 disposed on insulator 108, and connecting electrode 110passing through insulator 108 to electrically connect wiring electrode104 to terminal electrode 109.

Elastic wave device 101 may necessarily include an inductor having acertain inductance and a certain Q-factor in order to improvecharacteristics, such as an insertion loss, an out-of-band attenuation,and isolation. It is difficult to form a conductive trace functioning asthe inductor having such characteristics on piezoelectric substrate 102.Elastic wave device 101 may be necessary to add a separate inductorbesides elastic wave device 101 for composing an electronic apparatus.

CITATION LIST Patent Literature

Patent Literature 1: Japanese Patent Laid-Open Publication No.2009-10121

SUMMARY OF THE INVENTION

An elastic wave device includes a piezoelectric substrate, an IDTelectrode disposed on the piezoelectric substrate, a wiring electrodedisposed on the piezoelectric substrate and connected to the IDTelectrode, a first insulator disposed on the piezoelectric substrate toseal the IDT electrode and the wiring electrode, a resin layer providedon the first insulator, an inductor electrode disposed on the resinlayer, a second insulator disposed on the resin layer to cover theinductor electrode, a terminal electrode disposed on the secondinsulator, and a connecting electrode passing through the firstinsulator, the second insulator, and the resin layer to electricallyconnect the wiring electrode, the terminal electrode, and the inductorelectrode. The first insulator includes a resin and filler dispersed inthe resin. A density of filler in the resin layer is smaller than anaverage density of the filler in the first insulator.

This elastic wave device has excellent characteristics of the inductorwhile reducing variations of the characteristics.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1A is a schematic cross-sectional view of an elastic wave deviceaccording to Exemplary Embodiment 1 of the present invention.

FIG. 1B is a plan view of a main portion of the elastic wave deviceshown in FIG. 1A.

FIG. 2A shows a changing rate of an inductance of an inductor electrodeof the elastic wave device according to Embodiment 1.

FIG. 2B shows a changing rate of the inductance of the inductorelectrode of the elastic wave device according to Embodiment 1.

FIG. 3A is a schematic cross-sectional view of an elastic wave deviceaccording to Exemplary Embodiment 2 of the invention.

FIG. 3B is a plan view of a main portion of the elastic wave deviceshown in FIG. 3A.

FIG. 4 is a circuit diagram of an elastic wave device according toExemplary Embodiment 3 of the invention.

FIG. 5 is a schematic cross-sectional view of the elastic wave deviceaccording to Embodiment 3.

FIG. 6 is a plan view of the elastic wave device according to Embodiment3.

FIG. 7A is a plan view of a main portion of the elastic wave deviceaccording to Embodiment 3.

FIG. 7B is a plan view of a main portion of the elastic wave deviceaccording to Embodiment 3.

FIG. 8 is a schematic cross-sectional view of a conventional elasticwave device.

FIG. 9 is a schematic cross-sectional view of another conventionalelastic wave device.

DETAIL DESCRIPTION OF PREFERRED EMBODIMENTS

Exemplary Embodiment 1

FIG. 1A is a schematic cross-sectional view of elastic wave device 21according to Exemplary Embodiment 1 of this invention. Elastic wavedevice 21 includes piezoelectric substrate 22, interdigital transducer(IDT) electrode 23 disposed on upper surface 22U of piezoelectricsubstrate 22, wiring electrodes 24 disposed on upper surface 22U ofpiezoelectric substrate 22, sidewall 25 formed on upper surface 22U ofpiezoelectric substrate 22, top plate electrode 27 provided on uppersurface 25U of sidewall 25, insulator 28 covering sidewall 25 and topplate electrode 27, resin layer 33 disposed on upper surface 28U ofinsulator 28, inductor electrodes 29 disposed on upper surface 33U ofresin layer 33, insulator 30 covering inductor electrodes 29 and uppersurface 33U of resin layer 33, terminal electrodes 31 disposed on uppersurface 30U of insulator 30, and connecting electrodes 32 passingthrough insulators 28 and 30 and resin layer 33. Wiring electrodes 24are connected to IDT electrode 23. Sidewall 25 surrounds IDT electrode23. Top plate electrode 27 covers space 26 above IDT electrode 23. Eachof connecting electrodes 32 electrically connects respective one ofwiring electrodes 24, respective one of inductor electrodes 29, andrespective one of terminal electrodes 31. Resin layer 33 is providedbetween insulator 28 and inductor electrodes 29. A density of filler inresin layer 33 is smaller than a density of the filler in insulator 28.

Piezoelectric substrate 22 is a substrate made of mono-crystalpiezoelectric material, such as lithium tantalate, lithium niobate, orcrystal.

A bonding layer of titanium is formed on upper surface 22U ofpiezoelectric substrate 22, and a metal film mainly including aluminumis formed on the bonding layer by sputtering. The metal film is thendry-etched to be patterned by a photolithographic method to form IDTelectrode 23 and wiring electrode 24. IDT electrode 23 includes combelectrodes facing each other to excite an elastic wave on upper surface22U of piezoelectric substrate 22. Wiring electrode 24 is a wiring traceconnected to IDT electrode 23, thus constituting a circuit of elasticwave device 21.

FIG. 1B is a plan view of a main portion of elastic wave device 21, andparticularly, is a plan view of inductor electrode 29. Inductorelectrode 29 is made of a conductive strip which extends spirally andwhich is made of conductive material, such as metal, on upper surface33U of resin layer 33. The conductive strip extends from end 29S to end29T. End 29S is located on an outer side of the spiral shape. End 29T islocated on an inner side of the spiral shape. End 29S is connected towiring electrode 24. End 29T is connected to terminal electrode 31.Inductor electrode 29 according to Embodiment 1 has the spiral shape,but may having another shape, such as a meandering shape.

Sidewall 25 is formed by patterning photosensitive polyimide by aphotolithography technique, and seals sides of space 26 allowing IDTelectrode 23 to excite in space 26.

A conductive foil, such as a copper foil, is bonded onto upper surface25U of sidewall 25 with an adhesive layer made of resin, and then, hasits upper surface plated to form top plate electrode 27 metal. Top plateelectrode 27 seals space 26 from above space 26 allowing IDT electrode23 excite therein. Top plate electrode 27 and sidewall 25 thus coversIDT electrode 23.

Insulator 28 is made of thermosetting, epoxy resin to cover sidewall 25and top plate electrode 27. Insulator 28 is cured, and then, an uppersurface of insulator 28 is ground to shape insulator 28. This process ofgrinding exposes surfaces of connecting electrodes 32 flush with uppersurface 28U of insulator 28 to allow connecting electrodes 32 to bereadily connectable to inductor electrodes 29. Insulator 28 includesinsulation resin 28C, such as the epoxy resin, and not less than 20 wt.% of filler 28D dispersed in the insulation resin. This material canensure the physical strength sufficient to maintain space 26 forexcitation of IDT electrode 23 while preventing moisture from enteringinto space 26. The filler to be included in insulator 28 can be agranular form of material, such as silica, mica, or alumina.

In order to forming resin layer 33, first, upper surface 28U ofinsulator 28 is coated by spin coating with an insulation resin, such asphotosensitive epoxy resin which does not include filler. The coatedinsulation resin is exposed to light and cured to form resin layer 33except for portions where connecting electrodes 32 passing through, by aphotolithography to expose the portions of connecting electrodes 32.Resin layer 33 covers asperities of upper surface 28U of insulator 28,so that upper surface 33U of resin layer 33 becomes flat for inductorelectrodes 29 to be formed. The flatness of upper surface 33U of resinlayer 33 can smooth lower surfaces of inductor electrodes 29 formedthereon, and reduce resistances of inductor electrodes 29 to skincurrents of high frequencies. This reduces a loss of electric energy,and improves characteristic of inductor electrodes 29 functioning asinductors. Resin layer 33 needs to be provided only on a base surfacewhere inductor electrodes 29 are formed, and has a small thickness justsufficient to smooth the asperities of upper surface 28U of insulator28. Resin layer 33 improves an electrical characteristic of inductorelectrodes 29 at high frequencies since it does not contain filler. Ingeneral, since the filler generally has a specific dielectric constanthigher than that of the resin, the filler accordingly increases adielectric loss at high frequencies when added to the resin. Since resinlayer 33 does not contain filler, resin layer 33 reduces a specificdielectric constant of the insulator around inductor electrodes 29,thereby reducing the dielectric loss and improving the electricalcharacteristic of inductor electrodes 29.

Inductor electrodes 29 are electrodes made of metal, such as copper,formed on upper surface 33U of resin layer 33 by photolithography, andfunction as inductors having inductances.

Insulator 30 covers inductor electrodes 29 and upper surface 33U ofresin layer 33, and is made of photosensitive epoxy resin not containingfiller. This resin is coated on inductor electrodes 29 upper surface 33Uof resin layer 33 by spin coating, and then, is exposed to light to becured by photolithography to form insulator 30 except for portionsconnecting electrodes 32 passing through. Insulator 30 includes resin30C, and may include contain filler 30D dispersed in resin 30C. Filler30D ensures the physical strength of insulator 30. In the case thatelastic wave device 21 is used in a resin-molded configuration, such astransfer molding, particularly requiring a high molding pressure,inductor 30 may necessarily has a large physical strength in order toavoid a change in the characteristic of inductor electrodes 29 due todeformation of insulator 30 due to the molding pressure. In this case,not less than 20 wt. % of filler 30D may be included in insulator 30.Insulator 30 may have resin layer 34 containing substantially no filler30D or a lower density of filler 30D than that of insulator 30 aroundinductor electrodes 29 so that resin layer 34 covers inductor electrodes29. Resin layer 34 having substantially no filler 30D or of the lowerdensity than that of insulator 30 can reduce dent marks formed in thesurfaces of inductor electrodes 29 due to granular particles of filler30D being pressed against the surfaces of inductor electrodes. This canensure smoothness of the surfaces of inductor electrodes 29 andmaintains excellent electrical characteristic of inductor electrodes 29at high frequencies. In the case that resin layer 34 does not includefiller 30D, the specific dielectric constant of the insulator decreasesaround inductor electrodes 29. This configuration reduces dielectricloss and improves the electrical characteristic of inductor electrodes29. In the case that resin layer 34 includes filler 30D at a lowdensity, the density of filler 30D in resin layer 34 is adjusted to belower than a density of at least one of filler 28D of insulator 28 andfiller 30D of insulator 30. In the case that resin layer 34 includes thelow density of filler 30D, an average particle diameter of the filler tobe included is ⅓ of a minimum gap between conductor traces of inductorelectrodes 29. Such particle diameters can reduce an adverse influenceof the filler on inductor electrodes 29, and maintain the superiorcharacteristic as the inductors.

Terminal electrodes 31 are metallic electrodes formed on the surface ofinsulator 30, and function as an input-output terminal and a groundingterminal of elastic wave device 21.

Connecting electrodes 32 are metallic electrodes passing throughinsulators 28 and 30 and resin layer 33, and are formed by plating ametal, such as copper, for electrically connecting wiring electrodes 24,inductor electrodes 29, and terminal electrodes 31. The portions ofconnecting electrodes 32 that pass through insulator 28 are formedsimultaneously when top plate electrode 27 is formed by plating, therebysimplifying the process of fabrication.

As described above, elastic wave device 21 according to Embodiment 1includes resin layer 33 containing substantially no filler betweeninsulator 28 and inductor electrodes 29. This structure smoothes uppersurface 28U of insulator 28 by spreading resin layer 33 not containingfiller over the asperities in upper surface 28U, and allows inductorelectrodes 29 formed on smooth, upper surface 33U. It can thus achievesmoothness of the surfaces of inductor electrodes 29 that ensureexcellent high frequency characteristic and reduce variations of thecharacteristics.

In conventional elastic wave device 1 shown in FIG. 8, the upper surfaceof insulator 8 is roughened due to grinding. Inductor electrodes 9formed on the upper surface of insulator 8 tends to have a low Q-factorand a large variation of their inductances due to the ground surface.

Since insulator 28 contains filler 28D, the granular particles of filler28D project on upper surface 28U of insulator 28. When resin layer 33which do not containing filler is formed to fill spaces between thegranular particles, resin layer 33 shares a part of filler 28D ofinsulator 28 in an area contacting insulator 28. Resin layer 33 maytherefore be regarded as an insulator containing a density of fillersmaller than the average density of the filler in insulator 28. In otherwords, resin layer 33 containing the filler of a smaller density thaninsulator 28 provided between insulator 28 and inductor electrodes 29allows inductor electrodes 29 to be placed on very smooth upper surface33U of resin layer 33. This smoothes the surfaces of inductor electrodes29, and ensures excellent high frequency characteristic as theinductors. In the case that the thickness of resin layer 33 is largerthan the average particle diameter of filler 28D of insulator 28, filler28D projecting from insulator 28 can be covered positively with resinlayer 33, and improve the high frequency characteristic of theinductors.

In addition, elastic wave device 21 according to Embodiment 1 mayinclude resin layer 34 around inductor electrodes 29 where resin layer34 covers inductor electrodes 29. Resin layer 34 is made of materialcontaining substantially no filler or at a density lower than that offiller 28D of insulator 28 or filler 30D of insulator 30. This structuremaintains smoothness of the surfaces of inductor electrodes 29 so as toensure excellent high frequency characteristic while reducing variationsof inductor electrodes 29.

In elastic wave device 21 according to Embodiment 1, resin layer 33 ismade of photosensitive epoxy resin that does not contain filler.However, resin layer 33 can smoothes to the surfaces of inductorelectrodes 29 even when it contains filler of a low density. The maximumparticle diameter of the filler contained in resin layer 33 may bereduced to smooth the surfaces of inductor electrodes 29. However, resinlayer 33 preferably does not contain filler in view of the smoothness inthe surfaces of inductor electrodes

Furthermore, elastic wave device 21 according to Embodiment 1 includesinsulator 28 made of a resin containing filler 28D while insulator 28can be made of insulation material other than resin material. Thesmoothness of the surfaces of inductor electrodes 29 is adverselyaffected by roughness of the surface of insulator 28 if inductorelectrodes 29 are formed directly on upper surface 28U of insulator 28.Elastic wave device 21 according to Embodiment 1 ensures the smoothnessof the surfaces of inductor electrodes 29 by providing resin layer 33made of the resin not containing any filler between insulator 28 andinductor electrodes 29, thereby maintaining the excellent high frequencycharacteristic of inductor electrodes 29.

In the case that both of insulators 28 and 30 are made of resinmaterials containing fillers 28D and 30D, respectively, the adhesionbetween insulators 28 and 30 can be retained by providing any of resinlayers 33 and 34 containing substantially no filler or a small densityof filler over the entire surfaces between insulators 28 and 30.

Elastic wave device 21 according to Embodiment 1 is a surface acousticwave filter having internal space 26 for exciting IDT electrode 23, butmay be an elastic boundary-wave filter which does not have space 26,providing the same effects. In elastic wave device 21 having internalspace 26 for exciting IDT electrode 23, however, filler 28D is includedin resin 28C to form insulator 28 since elastic wave device 21 requiresa physical strength to maintain the shape of space 26 while preventingmoisture from entering into space 26. In this case, smoothness of thesurfaces of inductor electrodes 29 is reduced when inductor electrodes29 are formed directly on upper surface 28U of insulator 28. Resin layer33 which does not contain filler is provided between upper surface 28Uof insulator 28 and inductor electrodes 29 to secure the high frequencycharacteristic of inductor electrodes 29.

In elastic wave device 21 according to Embodiment 1, insulator 28 andresin layer 33 are formed by coating and during resin of liquid form,but may be formed by laminating sheets of uncured resin. In this case, asheet resin of insulator 28 and another sheet resin of resin layer 33are laminated to form both of insulator 28 and resin layer 33simultaneously. Alternatively, insulator 28 and resin layer 33 may beformed by using a single resin sheet containing filler of a low densityat one side facing inductor electrodes 29.

FIGS. 2A and 2B show changing rates of the inductance of inductorelectrode 29 of elastic wave device 21 according to Embodiment 1.Samples of elastic wave device 21 were prepared in which upper surface27U of top plate electrode 27 is located away from lower surface 29L ofinductor electrode 29 by distance D1, and lower surface 31L of terminalelectrode 31 is located away from upper surface 29U of inductorelectrode 29 by distance D2. A pressure of 70 bars, which is equivalentto a molding pressure in the transfer molding, was applied to thesesamples. FIGS. 2A and 2B show changing rate at which the inductance ofinductor electrode 29 after the pressure is applied changes from theinductance before the pressure is applied.

FIG. 2A shows a changing rate of the inductance of inductor electrode 29when distance D1 changes from 10 μm to 120 μm with distance D2unchanged. The changing rate of the inductance of inductor electrode 29can be controlled to 10% or less by determining distance D1 to be notsmaller than 15 μm. The changing rate of the inductance of inductorelectrode 29 can be controlled further to 1% or less by determiningdistance D1 to be not smaller than 50 μm.

FIG. 2B shows a changing rate of the inductance of inductor electrode 29when distance D2 is changed from 5 μm to 90 μm with distance D1unchanged. The changing rate of the inductance of inductor electrode 29can be controlled to 10% or less by determining distance D2 to be notsmaller than 10 μm. The changing rate of the inductance of inductorelectrode 29 can be controlled further to 1% or less by determiningdistance D2 to be not smaller than 30 μm.

The changing rate is reduced to 10% or less when inductor electrodes 29disposed in elastic wave device 21 are used as inductors connected to agrounding circuit of a duplexer. In this case, distance D1 from uppersurface 27U of top plate electrode 27 to lower surface 29L of inductorelectrode 29 is set to be not smaller than 15 μm, and distance D2 fromlower surface 31L of terminal electrode 31 to upper surface 29U ofinductor electrode 29 is set to be not smaller than 10 μm. Thisstructure can reduce variations of inductances of inductor electrodes 29and obtain predetermined characteristics even if elastic wave device 21is used in a resin-molded configuration, such as transfer molding, madewith a high molding pressure.

Moreover, the variations of the inductances can be further reduced to 1%or less by determining distance D1 to be not smaller than 50 μm, anddetermining distance D2 to be not smaller than 30 μm, thereby providingthe inductance characteristic accurately.

Exemplary Embodiment 2

FIG. 3A is a schematic cross-sectional view of elastic wave device 111according to Exemplary Embodiment 2 of this invention. Elastic wavedevice 111 includes piezoelectric substrate 112, interdigital transducer(IDT) electrodes 113 disposed on upper surface 112U of piezoelectricsubstrate 112, wiring electrodes 114 disposed on upper surface 112U ofpiezoelectric substrate 112, sidewall 115 formed on upper surface 112Uof piezoelectric substrate 112, adhesive layer 117 provided on uppersurface 115U of sidewall 115, top plate electrode 118 provided on uppersurface 117U of adhesive layer 117, insulator 119 disposed on uppersurface 112U of piezoelectric substrate 112, inductor electrode 120disposed on upper surface 119U of insulator 119, insulator 121 disposedon upper surface 119U of insulator 119, terminal electrodes 122 disposedon upper surface 121U of insulator 121, connecting electrodes 123passing through insulator 119, connecting electrodes 124 passing throughinsulator 121, and connecting electrodes 125 passing through insulator119. Sidewall 115 surrounds IDT electrodes 113. Adhesive layer 117covers excitation space 116 provided above IDT electrodes 113. Top plateelectrode 118 is made of metal. Insulator 119 covers sidewall 115,adhesive layer 117, and top plate electrode 118. Insulator 121 coversinsulator 119 and inductor electrode 120. Connecting electrode 123connects wiring electrode 114 electrically to inductor electrode 120.Connecting electrode 124 connects inductor electrode 120 electrically toterminal electrode 122. Connecting electrode 125 connects inductorelectrode 120 electrically to top plate electrode 118. Sidewall 115,adhesive layer 117, and insulators 119 and 121 constitute insulationbody 126 that seals excitation space 116.

FIG. 3B is a plan view of a main portion of elastic wave device 111, andparticularly, is a plane view of inductor electrode 120. Inductorelectrode 120 is made of a conductive strip which extends spirally andis made of conductive material, such as metal, on upper surface 119U ofinsulator 119. The conductive strip extends from end 127 to end 128. End127 is located at an outer side of the spiral shape, and end 128 islocated at an inner side of the spiral shape.

End 127 of inductor electrode 120 is connected to wiring electrode 114via connecting electrode 123. End 128 of inductor electrode 120 isconnected to terminal electrode 122 via connecting electrode 124, and isconnected to top plate electrode 118 via connecting electrode 125.

Piezoelectric substrate 112 is a base substrate made of mono-crystalpiezoelectric material, such as lithium tantalate, lithium niobate, orcrystal.

IDT electrodes 113 and wiring electrodes 114 can be formed by disposinga metal film mainly containing aluminum via a bonding layer made oftitanium on upper surface 112U of piezoelectric substrate 112 bysputtering. The metal film is then dry-etched to be patterned by aphotolithographic method. IDT electrodes 113 including comb electrodesfacing each other to excite an elastic wave on upper surface 112U ofpiezoelectric substrate 112. Wiring electrodes 114 are connected to IDTelectrodes 113 to constitute a circuit of elastic wave device 111.

Sidewall 115 is made of a photosensitive polyimide by photolithography,and seals sides of excitation space 116 allowing IDT electrodes 113 toexcite in space 116.

Adhesive layer 117 bonds top plate electrode 118 to upper surface 115Uof sidewall 115 to seal above excitation space 116 allowing IDTelectrodes 113 excite therein.

Top plate electrode 118 is formed by bonding a copper foil to uppersurface 115U of sidewall 115 with adhesive layer 117, andelectro-plating copper on an upper surface of the copper foil. Top plateelectrode 118 increases the physical strength of adhesive layer 117which seals excitation space 116 from above excitation space 116.

Connecting electrode 123 has a columnar shape formed by electro-platingcopper on wiring electrode 114 simultaneously when top plate electrode118 is formed by plating the copper. Connecting electrode 123 connectswiring electrode 114 electrically to inductor electrode 120.

Connecting electrode 125 has a columnar shape formed by electro-platingcopper on upper surface 118U of top plate electrode 118. Connectingelectrode 125 connects top plate electrode 118 electrically to inductorelectrode 120.

A sheet of thermosetting epoxy resin is softened and laminated to coversidewall 115, top plate electrode 118, and connecting electrode 123formed on upper surface 112U of piezoelectric substrate 112, and than iscured. An upper surface of the cured epoxy resin is then ground to allowthe resin to have a predetermined shape, providing insulator 119. Thisprocess of grinding also exposes the upper surfaces of connectingelectrodes 123 and 125 flush with upper surface 119U of insulator 119 toallow connecting electrodes 123 and 125 to be readily connectable toinductor electrode 120. Insulator 119 contains resin 119C, such as epoxyresin, and filler 119D made granular insulation material, such assilica, mica, or alumina, dispersed in resin 119C to provide thephysical strength necessary to maintain excitation space 116 where IDTelectrodes 113 excite and to prevent moisture from entering into space116. Insulator 119 can be formed by coating and curing an epoxy resin ofliquid form, and shaping its upper surface by grinding.

Inductor electrode 120 is made of a metal, such as copper, formed onupper surface 119U of insulator 119 by photolithography, and functionsas an inductor having an inductance.

Insulator 121 is made of a photosensitive epoxy resin covering insulator119 and inductor electrode 120, and does not containing filler. Thisresin of liquid form is coated by spin coating, exposed to light andcured by photolithography to form insulator 119 except for a portionwhich connecting electrode 124 passes through.

Connecting electrode 124 is an electrode made of metal having a columnarshape formed by electro-plating metal, such as copper, to penetratethrough insulator 121. Connecting electrode 124 connects inductorelectrode 120 electrically to terminal electrode 122.

Terminal electrodes 122 are electrodes made of formed on upper surface121U of insulator 121, and function as input-output terminals and agrounding terminal of elastic wave device 111.

In elastic wave device 111, an arrangement of IDT electrodes 113 onpiezoelectric substrate 112 generally restricts positions of connectingelectrodes 123 connected to wiring electrodes 114, hence tending toposition connecting electrodes 123 on a periphery of upper surface 112Uof piezoelectric substrate 112. Terminal electrodes 122 having a largearea reduce the restriction on the position of connecting electrodes 124connected to terminal electrodes 122.

In elastic wave device 111 according to Embodiment 2, end 127 ofinductor electrode 120 is connected to wiring electrode 114 viaconnecting electrode 123. End 128 of inductor electrode 120 is connectedto terminal electrode 122 via connecting electrode 124. This connectionminimizes a length of wiring paths for connecting inductor electrode120. This structure makes additional wiring unnecessary, therebyproviding elastic wave device 111 with a small size and a low resistanceloss.

As described above, elastic wave device 111 according to Embodiment 2includes piezoelectric substrate 112, IDT electrodes 113 disposed onpiezoelectric substrate 112, wiring electrodes 114 disposed onpiezoelectric substrate 112 and connected to IDT electrodes 113,insulators 119 and 121 that seal IDT electrodes 113 and wiringelectrodes 114 on piezoelectric substrate 112, inductor electrode 120embedded in insulation body 126, and terminal electrodes 122 disposed oninsulation body 126. End 127 of inductor electrode 120 is connected withwiring electrode 114 via connecting electrode 123. End 128 of inductorelectrode 120 is connected to terminal electrode 122 via connectingelectrode 124.

The above structure minimizes the length of wiring paths for connectinginductor electrodes 120, hence providing elastic wave device 111 with asmall size. The structure can also reduce the resistance loss since itdoes not require additional wiring for connection of inductor electrodes120, thereby providing excellent inductance characteristic of inductorelectrodes 120.

In particular, end 128 of inductor electrode 120 is positioned directlyunder terminal electrode 122. This structure can minimize a wiringlength of connecting electrode 124 that connects end 128 of inductorelectrode 120 to terminal electrode 122, and minimize the resistanceloss due to connecting electrode 124.

In addition, end 127 of inductor electrode 120 is positioned directlyabove wiring electrode 114. This structure can minimize a wiring lengthof connecting electrode 123 that connects end 127 of inductor electrode120 to wiring electrode 114 on piezoelectric substrate 112, and minimizethe resistance loss due to connecting electrode 123.

Moreover, elastic wave device 111 according to Embodiment 2 includespiezoelectric substrate 112, IDT electrodes 113 disposed onpiezoelectric substrate 112, wiring electrodes 114 disposed onpiezoelectric substrate 112 and connected to IDT electrodes 113,insulation body 126 that seals IDT electrodes 113 and wiring electrodes114 on piezoelectric substrate 112, inductor electrode 120 embeddedinside insulation body 126, terminal electrodes 122 disposed oninsulation body 126, connecting electrode 123 embedded inside insulationbody 126 to connect wiring electrode 114 to inductor electrodes 120, andconnecting electrode 124 connecting inductor electrode 120 to terminalelectrode 122. Inductor electrode 120 is entirely fit into an areadirectly below terminal electrode 122 and inside a space covered by anouter periphery of terminal electrode 122 in viewing from above.

Since terminal electrode 122 covers inductor electrode 120, terminalelectrode 122 prevents inductor electrode 120 from deforming due to anexternal force, and avoids changes in the inductor characteristic. Inthe case that an external force is applied to elastic wave device 111,if insulation body 126 covering excitation space 116 is deformed towardexcitation space 116 allowing IDT electrodes 113 to excite, the inductorcharacteristic changes due to the deformation of inductor electrode 120inside insulation body 126.

When elastic wave device 111 is molded into a resin particularly bytransfer molding after being mounted onto mother board 811 together withother electronic components, elastic wave device 111 is subjected tovery severe conditions, such as a temperature ranging from 170 to 180°C. and a pressure ranging from 50 to 100 atm, which is required for thetransfer molding. Insulation body 126 deforms largely under thiscondition, and accordingly, deforms the shape of inductor electrode 120disposed inside insulation body 126, thereby resulting in a substantialchange in the characteristic of the inductor. Insulation body 126 madeof resin material increases severity of the deformation.

The deformation of insulation body 126 due to the molding pressure ofthe resin becomes greater when inductor electrode 120 is positioneddirectly above excitation space 116, as shown in FIG. 3A. This positionhas inductor electrode 120 avoid to be positioned directly aboveexcitation space 116, thus restricting an area where inductor electrode120 can be formed.

Elastic wave device 111 is configured to be mounted onto external motherboard 811 having mounting electrodes 812 thereon. Terminal electrodes122 are configured to be bonded to mounting electrodes 812 withconductive adhesive 813, such as a solder. Upon being reinforced bymother board 811 and conductive adhesive 813, terminal electrodes 122 isprevented from deforming due to an external force, and reduces theeffect of molding pressure even when elastic wave device 111 istransfer-molded after mounted.

Elastic wave device 111 according to Embodiment 2 includes terminalelectrode 122 provided directly above inductor electrode 120 to coverinductor electrode 120. This structure reduces the effect of theexternal force on inductor electrode 120 even when elastic wave device111 is molded in a resin after mounted, thereby reducing a change in theinductor characteristic considerably, and stabilizing the electricalcharacteristic of elastic wave device 111.

This structure also reduces the limitation on the area where inductorelectrode 120 is formed within piezoelectric substrate 112, and providesa larger inductance without increasing a number of layers on whichinductor electrodes 120 are formed. This provides elastic wave device111 with a small size and a low profile even if inductors are builttherein.

In addition, elastic wave device 111 according to Embodiment 2 includestop plate electrode 118 formed inside insulation body 126 to coverexcitation space 116 from above, and connecting electrode 125 connectingtop plate electrode 118 to end 128 of inductor electrode 120. Thisstructure can reduce an adverse influence on the electricalcharacteristic of inductor electrode 120 due to the external force. Inother words, top plate electrode 118 covering excitation space 116 fromabove can secure the physical strength of a portion under inductorelectrode 120. Connecting electrode 125 connecting top plate electrode118 to end 128 of inductor electrode 120 can mechanically reinforce theposition of inductor electrode 120. This structure can further reducedeformation of inductor electrode 120 and avoid the change in theelectrical characteristic of inductor electrode 120 even when a largeexternal force is applied to elastic wave device 111 upon moldingelastic wave device 111 into a resin.

In elastic wave device 111 according to Embodiment 2, sidewall 115 andadhesive layer 117 constitute top cover 170 covering excitation space116, and insulators 119 and 121 constitute sealing body 171 that sealstop cover 170 above upper surface 112U of piezoelectric substrate 112.Top cover 170 and sealing body 171 constitute insulation body 126. Sinceelastic wave device 111 includes connecting electrode 123 locatedoutside of top cover 170, connecting electrode 123 is not needed topenetrate through top cover 170, thus simplifying the processes formanufacturing elastic wave device 111. This structure also shortenswiring connection between end 127 of inductor electrode 120 andconnecting electrode 123, hence providing elastic wave device 111 with asmall size and reducing undesired electromagnetic interaction.

In addition, the above structure can minimize the length of wiring pathfor connecting inductor electrode 120, and it can hence reduce aresistance loss since it does not require additional wiring forconnection. Thus, elastic wave device 111 having a small size having asurface area substantially equal to that of piezoelectric substrate 112provides inductor electrode 120 with an excellent inductancecharacteristic.

Inductor electrode 120 according to Embodiment 2 is has a spiral shape,but may have other shapes, such as a meandering shape. Terminalelectrode 122 to be soldered to mother board 811 is located directlyabove inductor electrode 120 to cover inductor electrode 120 directlyabove excitation space 116. This structure provides elastic wave devices111 with small changes in characteristics against external forces.

Exemplary Embodiment 3

FIG. 4 is a circuit diagram of elastic wave device 191 according toExemplary Embodiment 3 of this invention. FIG. 5 is a schematiccross-sectional view of elastic wave device 191. In figures, such asFIGS. 4 and 5, illustrating the device according to Embodiment 3,components identical to those of elastic wave device 111 according toEmbodiment 2 shown in FIG. 3A are dented by the same reference numerals.

As shown in FIG. 4, elastic wave device 191 is a duplexer includingtransmitting filter 129 and receiving filter 130. Input-output terminalsof transmitting filter 129 include unbalanced transmitting-side signalterminal 135A, transmitting-side grounding terminal 135B and antennaterminal 135C. Input-output terminals of receiving filter 130 includebalanced receiving-side signal terminals 135D, receiving-side groundingterminals 135E and antenna terminal 135C. Receiving filter 130 includestwo longitudinally coupled resonator type elastic wave filters 131 andone one-terminal pair elastic wave resonator 132 that are connected inseries along a signal path. Grounding paths of longitudinally coupledresonator type elastic wave filters 131 are connected to receiving-sidegrounding terminal 135E via top plate electrode 118. Transmitting filter129 includes series arm resonators 133 and parallel arm resonators 134which are one-terminal pair elastic wave resonators. That is,transmitting filter 129 includes a ladder type circuit including fiveseries arm resonators 133 connected in series along the signal path andthree parallel arm resonators 134 each connected between the signal pathand the grounding path. Inductor 136A is connected in series between oneof series arm resonators 133 closest to transmitting-side signalterminal 135A and transmitting-side signal terminal 135A. Inductor 136Bis connected between grounding sides of three parallel arm resonators134 and transmitting-side grounding terminal 135B. Transmitting-sidegrounding terminal 135B is connected to top plate electrode 118.

As shown in FIG. 5, elastic wave device 191 includes piezoelectricsubstrate 112, plural IDT electrodes 113 disposed on upper surface 112Uof piezoelectric substrate 112, wiring electrodes 114B and 114E disposedon upper surface 112U of piezoelectric substrate 112, sidewall 115formed on upper surface 112U of piezoelectric substrate 112, adhesivelayer 117 provided on upper surface 115U of sidewall 115, top plateelectrode 118 provided on upper surface 117U of adhesive layer 117,insulator 119 disposed on upper surface 112U of piezoelectric substrate112, inductor electrode 120B disposed on upper surface 119U of insulator119, insulator 121 disposed on upper surface 119U of insulator 119, andterminal electrodes 122B, 122C, and 122E disposed on upper surface 121Uof insulator 121. Wiring electrodes 114B and 114E are connected with IDTelectrodes 113. Sidewall 115 surrounds IDT electrodes 113. Adhesivelayer 117 covers excitation space 116 provided on IDT electrodes 113.Top plate electrode 118 is made of a metal. Insulator 119 coverssidewall 115, adhesive layer 117, and top plate electrode 118.Connecting electrode 123B passes through insulator 119, and electricallyconnects wiring electrode 114B to end 127B of inductor electrode 120B.Connecting electrodes 124B passes through insulator 121, andelectrically connects end 128B of inductor electrode 120B to terminalelectrode 122B. Connecting electrode 125B passes through insulator 119,and electrically connects end 128B of inductor electrode 120B to topplate electrode 118. Connecting electrode 123E passes through insulator119, and connects wiring electrode 114E to top plate electrode 118.Connecting electrode 124E passes through insulator 121, and connects topplate electrode 118 to terminal electrode 122E. Sidewall 115, adhesivelayer 117, and insulators 119 and 121 constitute insulation body 126that seals excitation space 116.

FIG. 6 is a plan view of piezoelectric substrate 112 of elastic wavedevice 191. Elastic wave device 191 includes transmitting filter 129 andreceiving filter 130 both disposed on upper surface 112U ofpiezoelectric substrate 112. Receiving filter 130 includes twolongitudinally coupled resonator type elastic wave filters 131 and oneone-terminal pair elastic wave resonator 132 that are connected inseries. Transmitting filter 129 includes a ladder type circuit includingfive series arm resonators 133 connected in series along the signal pathand three parallel arm resonators 134 each connected between the signalpath and the grounding path. Series arm resonators 133 and parallel armresonators 134 are one-terminal pair elastic wave resonators. Wiringelectrode 114A is an input-side wiring conductor of transmitting filter129, and is connected to connecting electrode 123A. Wiring electrode114B is a ground wiring of transmitting filter 129, and is connected toconnecting electrode 123B. Wiring electrode 114C is a common wiringconductor of both transmitting filter 129 and receiving filter 130, andis connected to connecting electrode 123C. Wiring electrode 114D is anoutput-side wiring conductor of receiving filter 130, and is connectedto connecting electrode 123D. Wiring electrodes 114E are ground wiringsof receiving filter 130, and are connected to connecting electrode 123E.

FIG. 7A is a plan view of a main portion of elastic wave device 191.Inductor electrodes 120A and 120B are disposed on upper surface 119U ofinsulator 119. Inductor electrode 120A is made of a conductive stripextending spirally made of conductive material, such as a metal, onupper surface 119U of insulator 119. The conductive strip extends fromend 127A to end 128A. End 127A is located at an outer side of the spiralshape, and end 128A is located at an inner side of the spiral shape.Inductor electrode 120B is made of a conductive strip extending spirallymade of conductive material, such as a metal, on upper surface 119U ofinsulator 119. The conductive strip extends from end 127B to end 128B.End 127B is located at an outer side of the spiral shape, and end 128Bis located at an inner side of the spiral shape. Inductor electrodes120A and 120B function as inductors that have inductances. Morespecifically, inductor electrode 120A constitutes inductor 136A shown inFIG. 4. Connecting electrode 123A is connected to a lower surface of end127A of inductor electrode 120A. Connecting electrode 124A is connectedto an upper surface of end 128A of inductor electrode 120A. Inductorelectrode 120B constitutes inductor 136B shown in FIG. 4. Connectingelectrode 123B is connected to a lower surface of end 127B of inductorelectrode 120B. Connecting electrode 124B is connected to an uppersurface of end 128B of inductor electrode 120B. Connecting electrode125B is connected to a lower surface of end 128B of inductor electrode120B.

FIG. 7B is a plan view of a main portion of elastic wave device 191.Terminal electrodes 122A, 122B, 122C, 122D and 122E are disposed onupper surface 121U of insulator 121. Terminal electrode 122A constitutestransmitting-side signal terminal 135A shown in FIG. 4. Terminalelectrode 122B constitutes transmitting-side grounding terminal 135Bshown in FIG. 4. Terminal electrode 122C constitutes antenna terminal135C shown in FIG. 4. Terminal electrode 122D constitutes receiving-sidesignal terminal 135D shown in FIG. 4. Terminal electrode 122Econstitutes receiving-side grounding terminal 135E also shown in FIG. 4.Connecting electrode 124A is connected to a lower surface of terminalelectrode 122A so that terminal electrode 122A is connected via inductorelectrode 120A and connecting electrode 123A to wiring electrode 114A,which is the input side wiring conductor of transmitting filter 129.Connecting electrode 124B is connected to a lower surface of terminalelectrode 122B. Terminal electrode 122B is connected via inductorelectrode 120B and connecting electrode 123B to wiring electrode 114B,which is the ground wiring of transmitting filter 129. Terminalelectrode 122B is also connected to top plate electrode 118 viaconnecting electrode 124B, terminal 128B of inductor electrode 120B, andconnecting electrode 125B. Connecting electrode 124C is connected to alower surface of terminal electrode 122C. Terminal electrode 122C isconnected via connecting electrode 123C to wiring electrode 114C, whichis the common wiring conductor of transmitting filter 129 and receivingfilter 130. Connecting electrode 124D is connected to a lower surface ofterminal electrode 122D. Terminal electrode 122D is connected viaconnecting electrode 123D to wiring electrode 114D, which is the outputside wiring conductor of receiving filter 130. Connecting electrode 124Eis connected to a lower surface of terminal electrode 122E so thatterminal electrode 122E is connected via top plate electrode 118 andconnecting electrode 123E to wiring electrode 114E, which is thegrounding side conductor of receiving filter 130.

In elastic wave device 191 according to Embodiment 3, the ladder typeelastic wave filter is formed on upper surface 112U of piezoelectricsubstrate 112, as illustrated above. Inductor electrode 120B isconnected between parallel arm resonators 134 of the ladder type elasticwave filter and transmitting-side grounding terminal 135B. Thus, theladder type filter circuit having inductor 136B connected to parallelarm resonators 134 can be arranged in elastic wave device 191 having asmall size.

In this ladder type elastic wave filter, an attenuation pole at alow-frequency side shifts when the inductance of inductor 136B connectedbetween parallel arm resonators 134 and transmitting-side groundingterminal 135B changes. This significantly influences the filteringcharacteristic. Inductor electrodes 120A and 120B, in particular, arelocated directly above IDT electrodes 113 of series arm resonators 133and parallel arm resonators 134. Upon receiving an external force,insulators 119 and 121 deform toward excitation space 116, and affectinductor electrodes 120A and 120B considerably. Inductor electrode 120Blocated directly above IDT electrode 113 is positioned directly underterminal electrode 122B for transmitting-side grounding terminal 135Bsuch that inductor electrode 120B is fit inside an area covered by anouter periphery of terminal electrode 122B in view from above, as shownin FIGS. 5, 7A, and 7B.

Elastic wave device 191 is configured to be mounted to external motherboard 911, as illustrated in FIG. 5. Mother board 911 has mountingelectrodes 912B, 912C, and 912E thereon. Terminal electrode 122B isconfigured to be bonded to mounting electrodes 912B with conductiveadhesive 913B, such as a solder. Being reinforced by mother board 911and conductive adhesive 913B, terminal electrode 122B is prevented fromdeforming due to an external stress. This structure reduces deformationof inductor electrode 120B due to the external force, stabilizes theinductance, and provides the ladder type elastic wave filter with stablefiltering characteristics. Similarly, terminal electrodes 122C and 122Eare configured to be fixed to mounting electrodes 912C and 912E withconductive adhesives 913C and 913E, such as solders, respectively. Beingreinforced by mother board 911 and conductive adhesives 913C and 913E,terminal electrodes 122C and 122E is prevented from deforming due to theexternal stress. Thus, deformation of elastic wave device 191 isreduced, stabilizing its characteristics.

Elastic wave device 191 forms the ladder type filter circuit onpiezoelectric substrate 112. Inductor electrode 120A is connectedbetween series arm resonator 133 and transmitting-side signal terminal135A of the ladder type filter circuit. This configuration provides theladder type filter circuit having inductor 136A connected in series toseries arm resonator 133 within small-sized elastic wave device 191.

Elastic wave device 191 according to Embodiment 3 includes receivingfilter 130 and transmitting filter 129 including the ladder typecircuit. Wiring electrode 114E at the ground side of receiving filter130 is connected to terminal electrode 122E of receiving-side groundingterminal 135E via top plate electrode 118. Wiring electrode 114B at theground side of parallel arm resonators 134 of transmitting filter 129 isconnected to end 127B of inductor electrode 120B via connectingelectrode 123B. End 128B of inductor electrode 120B is connected toterminal electrode 122B of transmitting-side grounding terminal 135B viaconnecting electrode 124B. Connecting electrode 125B connects top plateelectrode 118 to end 128B of inductor electrode 120B.

Top plate electrode 118 is used as a common grounding electrode of thereceiving side. Top plate electrode 118 is connected to groundingterminal 135B of the transmitting side via connecting electrode 125B.This enhances the transmitting-side and receiving-side grounding,improving isolation between transmitting filter 129 and receiving filter130, thereby providing the duplexer with excellent characteristics.

In Embodiments 1 to 3, terms indicating directions, such as “uppersurface”, “lower surface2”, “directly above2”, and “directly under”,indicate relative directions depending only on relative positions ofcomponents, such as the piezoelectric substrate and the IDT electrodes,of the elastic wave device, and doe not indicate absolute directions,such as a vertical direction.

Industrial Applicability

An elastic wave device according to the present invention ensureexcellent high-frequency electrical characteristics of built-ininductors in spite of their extremely small size, and are thereforeuseful as elastic wave devices used mainly for mobile telecommunicationsapparatuses.

Reference Marks in the Drawings

-   21 Elastic Wave Device-   22 Piezoelectric Substrate-   23 IDT Electrode-   24 Wiring Electrode-   25 Sidewall-   26 Space-   27 Top Plate Electrode-   28 Insulator (First Insulator)-   28C Resin (First Resin)-   28D Filler (First Filler)-   29 Inductor Electrode-   30 Insulator (Second Insulator)-   30C Resin (Second Resin)-   30D Filler (Second Filler)-   31 Terminal Electrode-   32 Connecting Electrode-   33 Resin Layer (First Resin Layer)-   34 Resin Layer (Second Resin Layer)-   111, 191 Elastic Wave Device-   112 Piezoelectric Substrate-   113 IDT Electrode (First IDT Electrode, Second IDT Electrode)-   114, 114A, 114B, 114C, 114D, 114E Wiring Electrode-   116 Excitation Space-   118 Top Plate Electrode-   119 Insulator (First Insulator)-   120, 120A, 120B Inductor Electrode-   121 Insulator (Second Insulator)-   122, 122A, 122B, 122C, 122D, 122E Terminal Electrode (First Terminal    Electrode, Second Terminal Electrode)-   123, 123A, 123B Connecting Electrode (First Connecting Electrode)-   124, 124A, 124B Connecting Electrode (Second Connecting Electrode)-   125,125B Connecting Electrode (Third Connecting Electrode)-   126 Insulation Body-   127, 127A, 127B End (First End)-   128, 128A, 128B End (Second End)-   129 Transmitting Filter-   130 Receiving Filter-   134 Parallel Arm Resonator-   170 Top Cover-   171 Sealing Body

The invention claimed is:
 1. An elastic wave device comprising: apiezoelectric substrate; an interdigital transducer (IDT) electrodedisposed on an upper surface of the piezoelectric substrate; a wiringelectrode disposed on the upper surface of the piezoelectric substrateand connected to the IDT electrode; a first insulator disposed on theupper surface of the piezoelectric substrate, the first insulatorsealing the IDT electrode and the wiring electrode, the first insulatorincluding a first resin and a first filler dispersed in the first resin;a first resin layer, distinct from the first insulator, provided on anupper surface of the first insulator; an inductor electrode disposed onan upper surface of the first resin layer; a second insulator disposedon the upper surface of the first resin layer, the second insulatorcovering the inductor electrode; a terminal electrode disposed on anupper surface of the second insulator; and a connecting electrodepassing through the first insulator, the second insulator, and the firstresin layer, the connecting electrode electrically connecting the wiringelectrode, the terminal electrode, and the inductor electrode, a densityof filler in the first resin layer being less than an average density ofthe first filler in the first insulator.
 2. The elastic wave device ofclaim 1 wherein the second insulator includes a second resin and asecond filler dispersed in the second resin, a density of the secondfiller included in the second insulator in a region disposed around theinductor electrode being less than the average density of the firstfiller in the first insulator and less than a density of the secondfiller included in the second insulator in regions other than the regiondisposed around the inductor electrode.
 3. The elastic wave device ofclaim 2 wherein the second insulator has a lower dielectric constant inthe region disposed around the inductor electrode than in the regionsother than the region disposed around the inductor electrode.
 4. Theelastic wave device of claim 1 further comprising a top plate electrodedisposed in the first insulator, the top plate covering above the IDTelectrode, a distance from an upper surface of the top plate electrodeto a lower surface of the inductor electrode being not smaller than 15μm.
 5. The elastic wave device of claim 4 wherein a distance from alower surface of the terminal electrode to an upper surface of theinductor electrode is not smaller than 10 μm.
 6. The elastic wave deviceof claim 1 wherein a distance from a lower surface of the terminalelectrode to an upper surface of the inductor electrode is not smallerthan 10 μm.
 7. The elastic wave device of claim 1 wherein the firstresin layer has a thickness larger than an average particle diameter ofthe first filler in the first insulator.
 8. The elastic wave device ofclaim 1 further comprising a top plate electrode disposed in the firstinsulator, the top plate covering above the IDT electrode, a distancefrom an upper surface of the top plate electrode to a lower surface ofthe inductor electrode being not smaller than 50 μm.
 9. The elastic wavedevice of claim 8 wherein a distance from a lower surface of theterminal electrode to an upper surface of the inductor electrode is notsmaller than 30 μm.
 10. The elastic wave device of claim 1 wherein theaverage density of the first filler in the first insulator is not lessthan 20 percent by weight.
 11. The elastic wave device of claim 1wherein the first resin layer has a lower dielectric constant than thefirst insulator.
 12. The elastic wave device of claim 1 wherein theinductor electrode is formed from a conductive material having a spiralshape and an average particle diameter of the filler in the first resinlayer is one third of a minimum gap between traces of the conductivematerial.
 13. An elastic wave device comprising: a piezoelectricsubstrate; an interdigital transducer (IDT) electrode disposed on anupper surface of the piezoelectric substrate; a wiring electrodedisposed on the upper surface of the piezoelectric substrate andconnected to the IDT electrode; an excitation space provided on an uppersurface of the IDT electrode for allowing the IDT electrode to excite inthe excitation space; an insulation body provided on the upper surfaceof the piezoelectric, the insulation body sealing the IDT electrode andthe excitation space; an inductor electrode disposed in the insulationbody, the inductor electrode having a first end and a second end; afirst terminal electrode disposed on an upper surface of the insulationbody; a first connecting electrode connecting the first end of theinductor electrode to the wiring electrode; a second connectingelectrode connecting the second end of the inductor electrode to thefirst terminal electrode; a top plate electrode disposed in theinsulation body, the top plate electrode covering above the excitationspace; and a third connecting electrode connecting the top plateelectrode to the second end of the inductor electrode.
 14. The elasticwave device of claim 13 further comprising: a second terminal electrodedisposed on the upper surface of the insulation body; a receiving filterhaving first ground wiring; and a transmitting filter including a laddertype circuit including a parallel arm resonator, the parallel armresonator including the IDT electrode and the IDT electrode havingsecond ground wiring, the first connecting electrode being connected tothe second ground wiring of the IDT electrode, and the first groundwiring of the receiving filter being connected to the top plateelectrode and the second terminal electrode.
 15. The elastic wave deviceof claim 13 further comprising: a second terminal electrode disposed onthe upper surface of the insulation body; a receiving filter having theIDT electrode and a ground wiring, the ground wiring of the receivingfilter being connected to the top plate electrode and the secondterminal electrode; and a transmitting filter.
 16. An elastic wavedevice comprising: a piezoelectric substrate; an interdigital transducer(IDT) electrode disposed on an upper surface of the piezoelectricsubstrate; a wiring electrode disposed on the upper surface of thepiezoelectric substrate and connected to the IDT electrode; anexcitation space provided on an upper surface of the IDT electrode, forallowing the IDT electrode to excite in the excitation space; aninsulation body disposed on the upper surface of the piezoelectricsubstrate, the insulation body sealing the IDT electrode and theexcitation space; an inductor electrode disposed in the insulation body,the inductor electrode having a first end and a second end; a firstterminal electrode disposed on an upper surface of the insulation body;a first connecting electrode connecting the first end of the inductorelectrode to the wiring electrode; and a second connecting electrodeconnecting the second end of the inductor electrode to the firstterminal electrode, the inductor electrode having a spiral shape, thefirst end of the inductor electrode being located at an outer side ofthe spiral shape, and the second end of the inductor electrode beinglocated at an inner side of the spiral shape, the inductor electrodebeing located directly under the first terminal electrode and occupyingan area inside an outer periphery of the first terminal electrode inview from above.
 17. The elastic wave device of claim 16 wherein thefirst end of the inductor electrode is disposed directly above thewiring electrode.
 18. An elastic wave device, comprising: apiezoelectric substrate; an interdigital transducer (IDT) electrodedisposed on an upper surface of the piezoelectric substrate; a wiringelectrode disposed on the upper surface of the piezoelectric substrateand connected to the IDT electrode; an excitation space provided on anupper surface of the IDT electrode, for allowing the IDT electrode toexcite in the excitation space; an insulation body disposed on the uppersurface of the piezoelectric substrate, the insulation body sealing theIDT electrode and the excitation space and including a top covercovering the excitation space and a sealing body disposed on the uppersurface of the piezoelectric substrate, the sealing body sealing the topcover; an inductor electrode disposed in the insulation body, theinductor electrode having a first end and a second end; a first terminalelectrode disposed on an upper surface of the insulation body; a firstconnecting electrode connecting the first end of the inductor electrodeto the wiring electrode, the first connecting electrode being disposedoutside of the top cover; and a second connecting electrode connectingthe second end of the inductor electrode to the first terminalelectrode, the inductor electrode having a spiral shape, the first endof the inductor electrode being located at an outer side of the spiralshape, and the second end of the inductor electrode being located at aninner side of the spiral shape.